S5 - S5 |
A High-Throughput Test Methodology for Atmospheric Corrosion Studies (vol 14, pg C9, 2011) Azmat NS, Ralston KD, Muster TH, Muddle BC, Cole IS |
B81 - B83 |
Preparation of Buckypaper Supported Pt Catalyst for PEMFC Using a Supercritical Fluid Method Zhu W, Zeng CC, Zheng JP, Liang R, Zhang C, Wang B |
D81 - D83 |
Metal-Free Disordered Vertical Sub-Micron Silicon Wires Produced from Electrochemical p-Type Porous Silicon Layers Gautier G, Defforge T, Kouassi S, Coudron L |
D84 - D88 |
Formation of p-Silicon Wire by Electrochemical Etching Using Positive Photoresist as an Etch Mask in Organic Electrolyte Jang HS, Choi HJ, Kang SM |
D89 - D93 |
Plasma-Enhanced Atomic Layer Deposition of TaCx Films Using Tris(neopentyl) Tantalum Dichloride and H-2 Plasma Kim TH, Eom TK, Kim SH, Kang DH, Kim H, Yu SH, Lim JM |
J45 - J47 |
A High Stable Blue BaSi3Al3O4N5:Eu2+ Phosphor for White LEDs and Display Applications Tang JY, Xie WJ, Huang K, Hao LY, Xu X, Xie RJ |
J48 - J50 |
Improved Performance of GaN-Based LEDs by Covering Top C-Plane of Patterned Sapphire Substrate with Oxide Layer Lin BW, Hsieh CY, Wang BM, Hsu WC, Wu YCS |
J51 - J54 |
Low-Voltage Poly-Si TFTs with Solution-Processed Aluminum Oxide Gate Dielectric Kang I, Avis C, Kang DH, Jang J |
P17 - P20 |
Subsurface Depletion and Enrichment Processes During Oxidation of a High Chromium, Laves-Phase Strengthened Ferritic Steel Asensio C, Chyrkin A, Niewolak L, Konoval V, Hattendorf H, Kuhn B, Singheiser L, Quadakkers WJ |
A109 - A112 |
Significant Improved Electrochemical Performance of Spinel LiMn2O4 Promoted by FePO4 Incorporation Yang Z, Li S, Xia SA, Jiang Y, Zhang WX, Huang YH |
A113 - A115 |
Methoxybenzene as an Electrolyte Solvent for the Primary Lithium Metal Air Battery Crowther O, Meyer B, Salomon M |
A116 - A119 |
Low Resistance Flexible Current Collector for Lithium Secondary Battery Yun JH, Han GB, Lee YM, Lee YG, Kim KM, Park JK, Cho KY |
A120 - A122 |
Electrical Double Layer Capacitors Based on Two 1-Ethyl-3-Methylimidazolium Ionic Liquids with Different Anions Kurig H, Vestli M, Janes A, Lust E |
H311 - H313 |
A HfO2 Thin Film Resistive Switch Based on Conducting Atomic Force Microscopy Son JY, Kim DY, Kim H, Maeng WJ, Shin YS, Shin YH |
H314 - H317 |
Fabrication of Transparent TiO2-x Channel-Based Thin Film Transistors using an Oxygen-Deficient TiO2-x Target Choi KH, Kim HK |
H318 - H321 |
An Approach for Correlating Friction Force and Removal Rate to Pad Topography during Tungsten Chemical Mechanical Planarization Sampurno Y, Rice A, Zhuang Y, Philipossian A |
H322 - H325 |
Forming-Free CuC-Buffer Oxide Resistive Switching Behavior with Improved Resistance Ratio Kim S, Jo M, Park J, Lee J, Lee W, Hwang H |
H326 - H329 |
Die-to-Die Adhesive Bonding Procedure for Evanescently-Coupled Photonic Devices Stankovic S, Jones R, Heck J, Sysak M, Van Thourhout D, Roelkens G |
H330 - H332 |
Bright Visible Light Extraction from Amorphous Silicon Nitride Heterojunction Pin Diode Anutgan TA, Anutgan M, Atilgan I, Katircioglu B |
H333 - H336 |
Organic Thin-Film Transistors with Short Channel Length Fabricated by Reverse Offset Printing Kim M, You IK, Han H, Jung SW, Kim TY, Ju BK, Koo JB |
H337 - H339 |
Effect of HfO2 Crystallinity on Device Characteristics and Reliability for Resistance Random Access Memory Kim JY, Yoo JH, Youn TO, Kim SJ, Kim JN, Lee SH, Joo MS, Roh JS, Park SK |
H340 - H342 |
Low Output-Conductance InAs-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with SiO2 Gate Dielectrics Ho HC, Fan TW, Lin HK |
H343 - H345 |
Characteristics of Slice InGaN/GaN Light Emitting Diodes by Focused Ion Beam Milling Hsu CK, Sheu JK, Wang JK, Lee ML, Chang KH, Tu SJ, Lai WC |
H346 - H349 |
Electronic Structure and Photovoltaic Properties of n-Type Amorphous In-Ga-Zn-O and p-Type Single Crystal Si Heterojunctions Lee K, Nomura K, Yanagi H, Kamiya T, Hosono H |