Electrochemical and Solid State Letters

Electrochemical and Solid State Letters, Vol.10, No.9 Entire volume, number list

ISSN: 1099-0062 (Print)

In this Issue (35 articles)

D89 - D91	Selective enhancement of SiO2 etch rate by ar-ion implantation for improved etch depth control Sun X, Lu Q, Takeuchi H, Balasubramanian S, Liu TJK
D92 - D94	Interconnection of micropad electrodes by controlled "extraneous" deposition of electroless NiB film Yokoshima T, Yamaji Y, Oosato H, Tamura Y, Kikuchi K, Nakagawa H, Aoyagi M
G63 - G67	Electrochemical impedance spectroscopy of dense silica and porous silicon oxycarbide Cherif KSA, Kordic S, Farkas J, Szunerits S
K39 - K41	High-efficiency blue organic light-emitting diodes using C-60 as a surface modifier on indium tin oxide Kim SH, Jang J, Yoon JH, Lee JY
P23 - P25	Effect of interfacial compound formation on contact resistivity of soldered junctions between bismuth telluride-based thermoelements and copper Liao CN, Lee CH, Chen WJ
A199 - A203	Stabilizing cyclability of an aqueous lithium-ion battery LiNi1/3Co1/3O2/LixV2O5 by polyaniline coating on the anode Wang HB, Huang KL, Zeng YQ, Zhao FG, Chen LQ
A204 - A207	Characterization of nanosize molybdenum trisulfide for lithium batteries and MoS3 structure confirmation via electrochemistry Wang J, Ng SH, Chew SY, Wexler D, Wang GX, Liu HK
A208 - A211	A nonflammable lithium polymer battery with high performance for elevated temperature applications Bakenov Z, Nakayama M, Wakihara M
A212 - A215	Opening mechanism of closed graphitized tips via low-temperature surface fluorination Groult H, Nakajima T, Tressaud A, Shibata S, Durand E, Perrigaud L, Warmont F
A216 - A219	Effects of triacetoxyvinylsilane as SEI layer additive on electrochemical performance of lithium metal secondary battery Lee YM, Seo JE, Lee YG, Lee SH, Cho KY, Park JK
A220 - A224	Substituted MxCu6-xSn5 compounds (M = Fe, Co, Ni, Zn) designing multicomponent intermetallic electrodes for lithium batteries Vaughey JT, Owejan J, Thackeray MM
A225 - A227	Implication of liquid-phase deposited amorphous RuO2 electrode for electrochemical supercapacitor Lee W, Mane RS, Todkar VV, Lee S, Egorova O, Chae WS, Han SH
A228 - A231	Suppression of Mn dissolution in spinel cathodes by trapping the protons within layered oxide cathodes Manthiram A, Choi W
B135 - B138	Ceria nanocoating for sulfur tolerant Ni-based anodes of solid oxide fuel cells Kurokawa H, Sholklapper TZ, Jacobson CP, De Jonghe LC, Visco SJ
B139 - B141	Nanoporous Ni-Fe bimetallic plates for nonfragile, reliable SOFCs Yan JW, Enoki M, Matsumoto H, Ishihara T
B142 - B146	Single PEMFC design and validation for high-temperature MEA testing and diagnosis up to 300 degrees C Tang YH, Zhang JL, Song CJ, Zhang JJ
B147 - B149	Carbon nanotube-supported platinum electrode for ORR in phosphoric acid solution - Effect of PTFE content and annealing temperature Paschos O, Knupp SL, Choi P, Snyder J, Buelte SJ, Merchant N, Qi ZG, Haldar P
B150 - B154	The impact of Ru contamination of a Pt/C electrocatalyst on its oxygen-reducing activity Gancs L, Hult BN, Hakim N, Mukerjee S
B155 - B160	Dynamic flow field for fuel cells Wilkinson DP, Blanco M, Zhao H, Wu J, Wang H
H243 - H247	Composite polymer core-silica shell abrasives effect of polishing time and slurry solid content on oxide CMP Armini S, Whelan CM, Moinpour M, Maex K
H248 - H250	Fabrication and characterization of p-n homojunctions in cuprous oxide by electrochemical deposition Wang LC, Tao M
H251 - H253	Multiple self-aligned iron nanowires by a dual selective chemical vapor deposition process Bien DCS, Bain MF, Low YH, Mitchell NSJ, Armstrong MB, Gamble HS
H254 - H256	Formation of Sb-doped SnO2 p-type ohmic contact for near-UV GaN-based LEDs by a CIO interlayer Hong HG, Song JO, Na H, Kim H, Kim KK, Seong TY
H257 - H259	ALD refill of nanometer-scale gaps with high-kappa dielectric for advanced CMOS technologies Lee D, Seidel T, Dalton J, Liu TJK
H260 - H263	Catalytic effect of Pt on Ni(Pt)-Si-O solid-state reaction Wei R, Dongzhi C
H264 - H266	Influence of F+ co-implants on EOR defect formation in B+-implanted, ultrashallow junctions Boninelli S, Cristiano F, Lerch W, Paul S, Cowern NEB
H267 - H269	Room-temperature-deposited indium-zinc oxide thin films with controlled conductivity Lim W, Wang YL, Ren F, Norton DP, Kravchenko II, Zavada JM, Pearton SJ
H270 - H272	In/ITO p-type electrode for high-brightness GaN-based light emitting diodes Song JO, Kim KK, Kim H, Hong HG, Na H, Seong TY
H273 - H277	A simple method for measurement of photoacid generator photoreaction kinetics in formulated, chemically amplified photoresist films Lee CT, Yueh W, Roberts J, Henderson CL
H278 - H280	Improvement in positive-bias-temperature-instabilities reliability and device performance of TaSiN/ HfSiON gate stacks with high temperature post-nitridation annealing Kamiyama S, Miura T, Nara Y
H281 - H283	Dynamic threshold switching behavior of Ge2Sb2Te5 and sb-doped Ge2Sb2Te5 thin films using scanning electrical nanoprobe Zhou P, Shin YC, Choi BJ, Choi S, Hwang CS, Lin YY, Lv HB, Yan XJ, Tang TA, Chen LY, Chen BM
H284 - H286	Characterization of photoconductive amorphous Si : H films for photoconducting sensor applications Phuong NM, Seong NJ, Ahn JK, Kim ET, Lee JH, Kim GH, Yoon SG
J101 - J104	A method to fabricate field emitters using electroless codeposited composite of MWNTs and nickel Liu YM, Sung Y, Chen YC, Lin CT, Chou YH, Ger MD
J105 - J107	A comparative study of SiCN/si and SiCN/SiCN junctions for high-temperature ultraviolet detecting applications Chou TH, Fang YK, Yang CY, Chiang YT, Shie JS, Chien CC
J108 - J112	Fabrication and characterization of a microsensor for detecting simultaneously both earth's magnetic field and acceleration Cho JM, Kim KS, An S, Lee SY, Kim SW