화학공학소재연구정보센터

Advanced Functional Materials

Advanced Functional Materials, Vol.25, No.40 Entire volume, number list
ISSN: 1616-301X (Print) 

In this Issue (13 articles)

6285 - 6286 Resistively Switching Chalcogenides
Waser R, Wuttig M
6287 - 6305 Resistive Switching in Mott Insulators and Correlated Systems
Janod E, Tranchant J, Corraze B, Querre M, Stoliar P, Rozenberg M, Cren T, Roditchev D, Phuoc VT, Besland MP, Cario L
6306 - 6325 Physics of the Switching Kinetics in Resistive Memories
Menzel S, Bottger U, Wimmer M, Salinga M
6326 - 6342 Oxygen Diffusion in SrTiO3 and Related Perovskite Oxides
De Souza RA
6343 - 6359 Microscopic Complexity in Phase-Change Materials and its Role for Applications
Deringer VL, Dronskowski R, Wuttig M
6360 - 6368 Formation and Movement of Cationic Defects During Forming and Resistive Switching in SrTiO3 Thin Film Devices
Lenser C, Koehl A, Slipukhina I, Du HC, Patt M, Feyer V, Schneider CM, Lezaic M, Waser R, Dittmann R
6369 - 6373 Atomic Structure of Antiphase Nanodomains in Fe-Doped SrTiO3 Films
Du HC, Jia CL, Mayer J, Barthel J, Lenser C, Dittmann R
6374 - 6381 Redox Reactions at Cu,Ag/Ta2O5 Interfaces and the Effects of Ta2O5 Film Density on the Forming Process in Atomic Switch Structures
Tsuruoka T, Valov I, Tappertzhofen S, van den Hurk J, Hasegawa T, Waser R, Aono M
6382 - 6389 Resistive Switching of a Quasi-Homogeneous Distribution of Filaments Generated at Heat-Treated TiO2 (110)-Surfaces
Rogala M, Bihlmayer G, Speier W, Klusek Z, Rodenbucher C, Szot K
6390 - 6398 Low-Temperature Transport in Crystalline Ge1Sb2Te4
Volker H, Jost P, Wuttig M
6399 - 6406 Disorder-Induced Localization in Crystalline Pseudo-Binary GeTe-Sb2Te3 Alloys between Ge3Sb2Te6 and GeTe
Jost P, Volker H, Poitz A, Poltorak C, Zalden P, Schafer T, Lange FRL, Schmidt RM, Hollander B, Wirtssohn MR, Wuttig M
6407 - 6413 Crystallization Properties of the Ge2Sb2Te5 Phase-Change Compound from Advanced Simulations
Ronneberger I, Zhang W, Eshet H, Mazzarello R
6414 - 6423 Realization of Boolean Logic Functionality Using Redox-Based Memristive Devices
Siemon A, Breuer T, Aslam N, Ferch S, Kim W, van den Hurk J, Rana V, Hoffmann-Eifert S, Waser R, Menzel S, Linn E