4541 - 4542 |
First Gerischer symposium - Semiconductor electrochemistry -Editorial Kolb DM |
4543 - 4551 |
Electron transport and back reaction in dye sensitised nanocrystalline photovoltaic cells Peter LM, Wijayantha KGU |
4553 - 4557 |
Variation of carboxylate-functionalized cyanine dyes to produce efficient spectral sensitization of nanocrystalline solar cells Ehret A, Stuhl L, Spitler MT |
4559 - 4564 |
The relationship between squaraine dye surface morphology and sensitization behavior on SnS2 electrodes Takeda N, Parkinson BA |
4565 - 4575 |
Ultrafast dynamics of light-induced electron injection from a molecular donor into the wide conduction band of a semiconductor as acceptor Willig F, Zimmermann C, Ramakrishna S, Storck W |
4577 - 4589 |
Fast processes at semiconductor-liquid interfaces: reactions at GaAs electrodes Siemoneit K, Reineke-Koch R, Meier A, Memming R |
4591 - 4598 |
The preparation of flat H-Si(111) surfaces in 40% NH4F revisited Allongue P, de Villeneuve CH, Morin S, Boukherroub R, Wayner DDM |
4599 - 4605 |
Metal deposition on n-Si(111): H electrodes Ziegler JC, Reitzle A, Bunk O, Zegenhagen J, Kolb DM |
4607 - 4613 |
Use of the bending-beam-method for the study of the anodic oxidation of Si in dilute fluoride media Decker F, Pantano E, Dini D, Cattarin S, Maffi S, Razzini G |
4615 - 4627 |
Surface analysis of the electropolishing layer on Si(111) in ammonium fluoride solution Lewerenz HJ, Jungblut H, Rauscher S |
4629 - 4633 |
Is there a limit for the passivation of Si surfaces during anodic oxidation in acidic NH4F solutions? Rappich J, Timoshenko VY, Wurz R, Dittrich T |
4635 - 4643 |
In-situ atomic force microscopy of silicon(100) in aqueous potassium hydroxide Raisch P, Haiss W, Nichols RJ, Schiffrin DJ |
4645 - 4653 |
The influence of oxidizing agents on etching and passivation of silicon in KOH solution Xia XH, Kelly JJ |
4655 - 4662 |
Reactions of Si-H to Si-X (X = halogen) bonds at H-terminated Si(111) surfaces in hydrogen halide solutions in the presence of oxidants Zhou XW, Ishida M, Imanishi A, Nakato Y |
4663 - 4672 |
XPS analysis of wet chemical etching of GaAs(110) by Br-2-H2O: comparison of emersion and model experiments Beerbom M, Henrion O, Klein A, Mayer T, Jaegermann W |
4673 - 4682 |
Formation and corrosion of InP/In contacts in hydrochloric acid Hassel AW, Aihara M, Seo M |
4683 - 4690 |
TiO2 photocatalysts and diamond electrodes Fujishima A, Rao TN, Tryk DA |
4691 - 4695 |
Boron doped diamond (BDD)-layers on titanium substrates as electrodes in applied electrochemistry Beck F, Kaiser W, Krohn H |
4697 - 4704 |
Wavelength-dependent switching of the photocurrent direction at the surface of molecular semiconductor electrodes based on orbital-confined excitation and transfer of charge carriers from higher excited states Schlettwein D, Karmann E, Oekermann T, Yanagi H |
4705 - 4716 |
Metal sulfide semiconductor electrochemical mechanisms induced by bacterial activity Tributsch H, Rojas-Chapana JA |