The mechanical integrity, stability, and strong interfacial adhesion between Cu, a high conductivity metal, and Dow Cyclotene 3022(w), a low permittivity polymer are important for their application in future high-speed microelectronic devices. In the present study, Cu was deposited by both evaporation and sputtering, and various Cyclotene surface modifications were carried out. These modifications included low pressure N(2)plasma and Ar(+) treatments and the use of a Ti interlayer The adhesion was evaluated by use of the microscratch test, and complemented by an adhesive tape peel test and XPS. The N(2) plasma treatment was found to lead to a dramatic increase in adhesion, which was influenced to a minor extent by the adhesion promoter that was used at the Cyclotene/Si substrate interface. This significant Cu/Cyclotene adhesion enhancement is interpreted in terms of the chemical groups present at the Cyclotene surface and the bonds formed on Cu deposition.