GaSb material presents interesting properties for single junction thermophotovoltaic (TPV) devices. GaSb:Te single crystal grown with Czochralski (Cz) or modified Czochralski (Mo-Cz) methods are presented and the problem of Te homogeneity discussed. As the carrier mobility is one of the key points for the bulk crystal, Hall measurements are carried out. We present here some complementary developments based on the material processing point of view: the bulk crystal growth, the wafer preparation, and the wafer etching. Subsequent steps after these are related to the p/n or n/p junction elaboration. Some results obtained for different thin-layer elaboration approaches are presented. So from the simple vapor phase diffusion process or the liquid phase epitaxy process up to the metal organic chemical vapor deposition process we report some material specificity.