Journal of the American Ceramic Society, Vol.93, No.8, 2147-2150, 2010
Ultra-Low Firing High-k Scheelite Structures Based on [(Li0.5Bi0.5)(x)Bi1-x][MoxV1-x]O-4 Microwave Dielectric Ceramics
In this work, dense ceramic samples across the solid solution of the [(Li0.5Bi0.5)(x)Bi1-x][MoxV1-x]O-4 system are prepared using the solid-state reaction process. The monoclinic phase region could be obtained for 0 < x < 0.098 and the scheelite tetragonal solid solution region could be obtained for 0.098 < x < 1. When x=0.098, the boundary composition [(Li0.5Bi0.5)(0.098)Bi-0.902][Mo0.098V0.902]O-4 could be readily sintered at 650 degrees C and also have excellent microwave properties with a high relative permittivity of 81, and a Q x f value of 8000 GHz and a low temperature coefficient of +9.7 ppm/degrees C. This ceramic is chemically compatible with both Al and Cu electrode materials at its sintering temperature. It can be an excellent candidate for ultra-low-temperature co-fired ceramic technology and is the highest permittivity microwave material found to date with sintering considerations as low as 650 degrees C.