A metal-oxide-semiconductor (MOS) capacitor embedded with gold nanoparticles (Au NPs) has been successfully fabricated by a spin-coating-derived chemical solution process. The colloidal synthesized Au NPs (similar to 3.5 nm) were self-assembled to 3-aminopropyltrimethoxysilane-modified silicon oxide substrates. With the spin-coating process, Au NPs can be fabricated onto silicon oxide with a high packing density of 1.6 x 1012 cm-2 in a short processing time. The sol-gel-derived HfO(2) layer, acting as a control oxide, was also spin coated to construct an Si/SiO(2)/Au NPs/HfO(2) structure. This MOS structure showed good memory effect and retention properties. This study indicates that it is appropriate to utilize the spin-coating process in nanocrystal memory applications.