High Curie-temperature 0.63Bi(Mg1/2Ti1/2)O-3-0.37PbTiO(3) (BMT-PT) ferroelectric thin films with a morphotropic phase boundary composition were successfully fabricated on Pt(111)/Ti/SiO2/Si substrates by sol-gel spin-coating method. The effect of annealing temperatures on the structure and electrical properties of BMT-PT thin films was explored. The scanning electron microscopy and atomic force microscopy images indicate that the film annealed at 675 degrees C for 30 min has a relatively dense and uniform microstructure and a thickness of about 375 nm, together with optimal dielectric and ferroelectric properties of remnant polarization 17.8 mu C/cm(2), coercive field 75 kV/cm, dielectric permittivity 1477, and loss tangent 0.07 at 1 kHz. The results indicate that the BMT-PT thin film has potential applications in high-temperature ferroelectric devices.