The effects of processing parameters on electrical properties of a p-type Li-doped ZnO film grown on a glass substrate by dc pulsed sputtering at substrate temperatures of 25 degrees-250 degrees C are investigated. Results show that loss of Li due to high evaporation or low sticking efficiency takes place during sputtering, which becomes more significant with increasing substrate temperature. This in turn increases the electrical resistivity of the film deposited from the same target, although both grain size and crystallinity of Li-doped ZnO films increase at a higher substrate temperature. A larger electrical resistivity is also observed with increasing flow rate of Ar carrier gas, and decreasing sputtering power as well.