Toxic arsenical species include As(III) and As(V), of which As(III) species have specially strong toxicity. Because of this strong toxicity, contamination of groundwater by arsenic and arsenic-containing effluent from the semiconductor production process pose environmental problems. This study is concerned with the removal of As(III) and As(V) with four kinds of Mg/Al layered double hydroxides (LDH) containing CO(3)(2-), SO(4)(2-), Cl(-) and NO(3)(-) as interlayer anionic species. Anion exchange properties were found to differ according to the kind of layered double hydroxide. Mg-Al-NO(3)(-)LDH was superior for exchange of As(III) and As(V) due to the nature of nitrate ion in the interlayer. For As(V) removal, pH of 7.1 or more was suitable. If the initial conditions are set as As(V) concentration of 10 mg/dm(3), pH 7.1, 1 m(3) of solution and 99% removal, the required amount of Mg-Al-NO(3)(-)LDH is 0.27 kg for two step-batch operations. As(III) should be oxidized to As(V) before the removal processing.