화학공학소재연구정보센터
Materials Research Bulletin, Vol.38, No.15, 1987-1992, 2003
Growth of alpha-HgI2 single crystals from physical vapor transport in an oil-bath furnace
The growth of alpha-HgI2 crystals from physical vapor transport in a closed ampoule immerged in a simple and economical oil-bath furnace with an external heating coil imposed is discussed. The temperatures of the source side, T-sou, of the maximum value, T-max, and of the crystal growth side, T-cry, together with dT/dx are changed for different growth conditions. The physical properties of the as-grown alpha-HgI2 crystals are characterized by scanning electron microscopy, X-ray diffraction, and I-V measurements with respect to different growth conditions. It is found that the alpha-HgI2 crystals grown from T-sou = 125 degreesC, T-max = 135 degreesC, T-cry = 114 degreesC, dT/dx = 2.6 degreesC/mm, and with 5 Torr inert gas inside the growth ampoule exhibit the best qualities, such as, observable facets, transparent red color, and a low density of defects and grain boundaries. (C) 2003 Elsevier Ltd. All rights reserved.