SiC-C films with content of 70% SiC were deposited by rf magnetron sputtering on stainless steel or NaCl substrate followed by argon ion bombardment. Samples were then submitted to hydrogen permeation at 3.23 x 10(7) Pa and 500 K for 3 h. Secondary ion mass spectroscopy (SIMS) was used to analyze hydrogen concentration with depth and to check the formation of hydrogen related bonds in the SiC-C films with IR measurement. Auger electron spectra (AES) and X-ray photoelectron spectra (XPS) were carried out to check the effects of hydrogen participation on shifts of chemical bonding states of C, Si and 0 contamination. (C) 2003 Elsevier Ltd. All rights reserved.