The single crystals with stoichiometry close to 1:1:2 of CuInTe2 (CIT) have been grown by chemical vapor transport (CVT) technique using iodine as the transporting agent at different growth temperatures. Single crystal X-ray diffraction studies have confirmed the chalcopyrite structure for the grown crystals and the volume of unit cell is found to be the same for the crystals grown at different conditions. Energy dispersive X-ray (EDAX) analysis of CIT single crystals grown shows almost the same stoichiometric compositions. Scanning electron microscope (SEM) analysis reveals kink, step and layer patterns on the surface of CIT single crystals depending on the growth temperatures. The optical absorption spectra of as-grown CIT single crystals grown at different conditions show that they have same band gap energies (1.0405 eV). Raman spectra exhibit a high intensity peak of A I mode at 123 cm(-1). Annealed at 473 K in nitrogen atmosphere for 40 h CIT single crystals have higher hole mobility (105.6 cm(2)V(-1)s(-1)) and hole concentration (23.28 x 10(17) cm(-3)) compared with values of hole mobility (63.69 cm(2) V-1 s(-1)) and hole concentration (6.99 x 10(15) cm(-3)) of the as-grown CIT single crystals. (C) 2007 Elsevier Ltd. All rights reserved.