To develop an efficient channel layer for thin film transistors (TFTs), understanding the defect-related luminescence and electrical property is crucial for solution-processed ZnO thin films. Film growth with the fluorides addition, especially using LiF, followed by the oxygen ambient post-annealing leads to decreased defect-related emission as well as enhanced switching property. The saturation mobility and current on/off ratio are 0.31 cm(2) V(-1) s(-1) and 1.04 x 10(3). Consequently, we can visualize an optimized process condition and characterization method for solution-processed TFT based on the fluorine-doped ZnO film channel layer by considering the overall emission behavior. (C) 2011 Elsevier Ltd. All rights reserved.