Materials Research Bulletin, Vol.46, No.6, 820-822, 2011
Single crystal growth and structure refinements of CsMxTe2-xO6 (M = Al, Ga, Ge, In) pyrochlores
Single crystals of CsMxTe2-xO6 pyrochlores with M = Al, Ga, Ge, and In have been grown from a TeO2 flux. Structure refinements from single crystal X-ray diffraction data are reported. These results are used to discuss deviations from ideal stoichiometry that result in electronic conductivity presumably related to mixed valency of tellurium. (C) 2011 Elsevier Ltd. All rights reserved.