Polyethylene samples implanted with 150 keV F+ ions to the doses 10(11)-10(15) Cm-2 were doped with iodine by exposing them to iodine vapors at 90 degrees C for 3 h. The iodine depth profiles, measured by Rutherford back-scattering techniques, evolve dramatically with increasing implanted doses, from "bumpy" profiles at lower fluences to a "depleted" one comprising two concentration maxima with no iodine in between observed at highest dose. The areal density of iodine incorporated into the 500-nm thick surface layer is proportional to the ion dose for the doses less than or equal to 1 X 10(13) cm(-2) and it achieves a saturation or declines at higher doses. The results support the concept of enhanced iodine diffusion in the radiation-damaged surface layer and its trapping on the radiation defects within. The sheet resistivity of as-implanted PE is practically constant, independent of the implanted dose. Iodine doping of the ion-implanted PE samples results in immediate, strong decrease of the sheet resistivity by 3-4 orders of magnitude which, however, is not stable. The measured temperature dependence of the sheet resistance indicates p-semiconducting character of ion-implanted and iodinated samples at the temperatures below the PE melting point. The iodine redistribution and/or escape with increasing temperature is observed.