Nanocryst. Si support was covered with F-C or Si-C-layers produced by plasma-induced chem. vapor deposition of octadecafluorodecahydronaphtalene at 25-150 degrees C in Ar in presence of O(2) (2.2-16% by vol.). The deposited layers were studied for chem. compn. and friction coeff. The F content was 33-48%. The friction coeff. (0.27-0.39) was much higher than that for the Si support (0.14). Unexpectedly, very low friction coeff. (0.06) was obsd., when the O(2) content in the gas mixt. was 4.4% (F content in the layer 0.4%).