Two methods were examined for the formation of poly-Si films. One is flux method and the other is Cat-CVD method. Flux method was used for forming poly-Si seed films on glass substrates covered with rear electrode. Poly-Si films of a few mum grain size and of mainly (111) crystalline orientation were obtained at less than 600 degreesC. To make the seed films function as BSF layer for solar cell, boron doping was applied and carrier concentration of 2 x 10(19)/cm(3) was obtained which is suitable for highly efficient solar cells. Cat (catalytic)-CVD method was examined for forming poly-Si photo-active layers on the seed films. The films showed deposition gas pressure-dependent crystalline orientations and there was no amorphous incubation layer in (111) oriented films by Cat-CVD method when deposited on(111) oriented seed films prepared by Flux method. The electrical properties of the film are insufficient at present, may be due to high defect density and the film structure which allows impurity contaminations of oxygen and carbon after film deposition. Although the film quality needs to be improved, poly-Si films whose crystal fraction is more than 85% were obtained at deposition rate of up to around 40 Angstrom /s. This result indicates high potential of Cat-CVD method for high throughput photo-active formation process necessary for low production cost thin him silicon solar cells.