Solar Energy Materials and Solar Cells, Vol.74, No.1-4, 393-400, 2002
Substrate temperature and hydrogen dilution: parameters for amorphous to microcrystalline phase transition in silicon thin films
Amorphous to microcrystalline phase transition in hydrogenated silicon (Si:H) is realized separately with the variations of substrate temperature and hydrogen dilution. The Raman spectroscopy reveals structural transformations and marks the transition. It occurs at similar to450degreesC with 10% silane concentration, whereas that is noted at 25degreesC with a silane concentration of 4.5%. The material evolved in the transition region is a well-developed amorphous matrix containing a small fraction (similar to12%) of crystallites. A uniform distribution of small (similar to100 Angstrom) crystallites in the films is observed by transmission electron microscopy. The transition material is photosensitive. (C) 2002 Elsevier Science B.V. All rights reserved.
Keywords:amorphous silicon;plasma-enhanced chemical vapor deposition;raman spectroscopy;phase transition;microcrystalline silicon