II-VI polycrystalline semiconducting materials have come under increased scrutiny because of their wide use in the cost reduction of devices for photovoltaic applications. Cd1-xZnxSe is an important semiconducting alloy because of the tunability of its physical parameters such as band gap and lattice parameters by controlling its stoichiometry. Many more material characteristics of it would be altered and excellently controlled by controlling system composition x. Polycrystalline thin films of Cd1-xZnxSe with variable composition (0 less than or equal to x less than or equal to 1) have been deposited onto ultra-clean glass substrates by sintering process. The optical, structural and electrical transport properties of Cd1-xZnxSe thin films have been examined. The optical band gap and optical constants of these films were determined by using double beam spectrophotometer. The DC conductivity and activation energy of the films were measured in vacuum by two-probe technique. The Schottky junction of Cd1-xZnxSe with indium was made and the barrier height and ideality factor were determined using current-voltage characteristics. The nature of sample, crystal structure and lattice parameters were determined from X-ray diffraction patterns. The films were polycrystalline in nature having cubic zinc-blende structure over the whole range studied. Sintering is very simple and viable compared to other cost intensive methods. The results of the present investigation will be useful in characterizing the material, Cd1-xZnxSe, for its applications in photovoltaics. (C) 2002 Elsevier Science B.V. All rights reserved.