Solid solutions in CuGaSe2-ZnSe and CuInSe2-ZnSe systems have been obtained by radio frequency heating. In order to prepare n-type phases based on CuGaSe2, p-type (CuGa)(1-x)Zn2xSe4 and (CuIn)(1-x)Zn2xSe4 (0.05less than or equal toxless than or equal to0.1) single crystals were doped by Ag, Hg, Cd, Zn implantation. The crystal structure of the solid solutions was studied by X-ray diffraction; the substitutors as well as the implantant valence states were analyzed using X-ray photoelectron spectroscopy. Hall effect, electrical conductivity, and the charge carrier mobility of an n-type zinc-implantated solid solution (CuGa)(1-x)Zn2xSe4 and (CuIn)(1-x)Zn2xSe4 (0.05less than or equal toxless than or equal to0.1) were studied. (C) 2002 Elsevier Science B.V. All rights reserved.