Polycrystalline thin films of CuInSe2 and Cu(In,Ga)Se-2 (CIGS) were grown on both polished Mo substrates and Mo-coated glass substrates by one-step electrodeposition. All the as-deposited films have been annealed in vacuum at 450degreesC for a short time to improve the crystalline properties. The films have been characterized by X-ray diffraction, scanning electron microscopy and energy dispersive X-ray analysis. The results indicate that the crystallization of the films was greatly improved after annealing. Further more, a CIGS film with 23 at% Ga was obtained. (C) 2003 Elsevier B.V. All rights reserved.