화학공학소재연구정보센터
Solar Energy Materials and Solar Cells, Vol.81, No.2, 217-224, 2004
Growth and characterization of 240 kg multicrystalline silicon ingot grown by directional solidification
Multicrystalline silicon ingot of 69 cm square cross section, 240 kg has been produced by a process in which graphite pedestal moves away from the heater with crystal growing. The material has shown consistency and uniformity in the properties required for large-scale production. Fabrication of the solar cell with this material shows cell performance very close to that of single-crystalline silicon material. (C) 2003 Elsevier B.V. All rights reserved.