The presence of the ultrasonic wave in the caustic etching process enhances the etching rate and results in a finer, and more homogeneous, textured structure. The silicon solar cell, texture etched for 20 min at 60degreesC in the caustic solution with ultrasonic wave, gives higher cell performance than the cell texture etched for 40 min at 70degreesC without ultrasonic wave. This comparison indicates a strong possibility of lowering the texturing cost of the silicon crystal by saving time and expensive chemicals normally employed in the texturisation of the crystalline silicon. (C) 2003 Elsevier B.V. All rights reserved.