Suppression of photo-induced dilation in cyanide treated hydrogenated amorphous silicon films

Sobajima Y; Mori K; Tsukamoto M; Yoshida N; Takahashi M; Kobayashi H; Nonomura S

Solar Energy Materials and Solar Cells, Vol.85, No.2, 177-187, 2005

DOI10.1016/j.solmat.2004.04.018 Export Citation

Suppression of photo-induced dilation in cyanide treated hydrogenated amorphous silicon films

Sobajima Y, Mori K, Tsukamoto M, Yoshida N, Takahashi M, Kobayashi H, Nonomura S

Effects of cyanide (CN) treatment with hydrogenated amorphous silicon (a-Si:H) films have been investigated. The decrease of VDelta/V was observed in cyanide treated a-Si:H films and the successive thermal annealing at 200degreesC after CN treatment induced the further reduction of the DeltaV/V. XPS spectra show the indirect evidence that the cyanide species is present within 10 nm from the hydrogenated amorphous silicon surface. The results of CN treatment with a-Si:H solar cells are demonstrated. (C) 2004 Elsevier B.V. All rights reserved.

Keywords:amorphous silicon;photoinduced dilation;cyanide treatment