Cd1-xZnxTe alloy films with 1.6 and 1.7ev band gaps were deposited by RF magnetron sputtering from targets made either of mixed powders or alloys of CdTe and ZnTe (25% and 40%). High-quality polycrystalline films with the (III) preferred orientation were obtained. The films were characterized using X-ray diffraction (XRD), scanning electron microscopy, resistivity, optical absorption, Raman, and photoluminescence. The EDS, XRD, and optical absorption analysis indicated that the x-value of the as-grown films were typically similar to 0.20 and 0.30 for films sputtered from 25% and 40% ZnTe containing targets, respectively. The as-deposited alloy films exhibit quite low photovoltaic performance when used to make cells with US as the hetero-junction partner. Therefore, we have studied various post-deposition treatments with vapors of chlorine-containing materials, CdCl2 and ZnCl2, in dry air or H-2/Ar ambient at similar to 390 degrees C. The best performance of a Cd1-xZnxTe cell (V-OC=737mV, J(SC) = 19 rnA/cm(2)) was found for treatment with vapors of the mixed CdCl2+0.5%ZnCl2 in an H-2/Ar ambient after pre-annealing at similar to 520 degrees C in pure H-2/Ar. (c) 2004 Elsevier B.V. All rights reserved.