US semiconductor films have been prepared from chemical bath deposition from basic solutions. Electron microscopic studies have revealed the presence of polycrystalline mixed cubic and hexagonal phases of US in the deposits. When surface treated, these layers show good photo electro chemical behaviour in Ti/CdS/-S/C cell Configuration where as photo etching improves the stability of US photo anode in polysulphide electrolyte to a great extent. Optical absorption studies of these filins, have been carried out in the wavelength range 350-800 nm. (c) 2005 Elsevier B.V. All rights reserved.