A new method of measurement of series resistance R-s and shunt resistance R-sh of a silicon solar cell is presented. The method is based on the single exponential model and utilizes the steady state illuminated I-V characteristics in third and fourth quadrants and the V-oc-I-sc characteristics of the cell. It enables determination of values of R-sh and R, with the intensity of illumination. For determination of R-s it does not require R-sh to be assumed infinite and realistic values of R-sh can be used. The method is very convenient to use and in the present study it has been applied to silicon solar cells having finite values of R-sh. We have found that R-sh is independent of intensity but the R-s decreases with both the intensity of illumination and the junction voltage. (c) 2006 Elsevier B.V. All rights reserved.