CdO/c-Si solar cells have been made by depositing CdO thin films on p-type monocrystalline silicon substrate by means of the rapid thermal oxidation (RTO) technique using a halogen lamp at 350 degrees C/45s in static air. Results on structural, optical, and electrical properties of grown CdO films are reported. The electrical and photovoltaic properties of CdO/Si solar cells are examined. Under AM I illumination condition, the cell shows an open circuit voltage (V-OC) of 500 mV, a short circuit current density (J(SC)) of 27.5 mA/cm(2), a fill factor (FF) of 60%, and a conversion efficiency (n) of 8.84% without using frontal grid contacts and/or post-deposition annealing. Furthermore, the stability of solar cells characteristics is tested. (C) 2007 Elsevier B.V. All rights reserved.