SILAR deposition of CuInSe2 films was performed by using Cu2+-TEAH(3) (cupric chloride and triethanolamine) and In3+-CitNa (indium chloride and sodium citrate) chelating solutions with weak basic pH as well as Na2SeSO3 solution at 70 degrees C. A separate mode and a mixed one of cationic precursor solutions were adopted to investigate effects of the immersion programs on crystallization, composition and morphology of the deposited CuInSe2 films. Chelating chemistry in two solution modes was deducted based on IR measurement. The XRD, XPS and SEM results showed that well-crystallized, smoothly and distinctly particular CuInSe2 films could be obtained after annealing in Ar at 400 degrees C for 1 h by using the mixed cationic solution mode. (c) 2008 Elsevier B.V. All rights reserved.