Charge conduction and photo-generation process in polythiophene functionalized with tin (II) phthalocyanine (SnPc-PT) is investigated. The dark current density-voltage (J-V) characteristics of indium tin oxide (ITO)/SnPc-PT/aluminum(Al) device has been analyzed at different temperatures ranging from 250 to 350 K and shows rectification behavior originated from the formation of Schottky barrier with low work function aluminum (4.2eV) and ohmic contact with high work function ITO (4.8eV), respectively. Conduction mechanism is governed by holes wherein at low forward bias, the current density was found to be limited by the thermionic emission of holes while at high voltages, space charge-limited current mechanism predominates by the exponential distribution of traps. Impedance measurement on Schottky barrier diodes has been discussed in the frequency range 40 Hz-1 MHz. The device with configuration ITO/SnPc-PT/Al shows the Schottky behavior, which can be modelled by a simple equivalent circuit consisting two RC elements in series, representing a bulk and a junction region, respectively. Low-frequency device capacitance shows pronounced voltage-dependence behavior and from a detailed analysis, the ionized acceptor concentration, potential barrier height and width of depletion layer have been calculated and discussed in detail. Photogeneration process and photovoltaic effect of sandwich devices were investigated by measuring steady state photocurrent resulting from illuminating the device through the ITO and Al electrode as well. On comparing with pure SnPc characteristics it is found that after occupying the interstitials space in polythiophene network, a dramatic reduction in band gap (E(g)) takes place to become SnPc-PT, which is also evidenced by the extension of absorption band towards low energy side. (c) 2008 Elsevier B.V. All rights reserved.