CuInTe2 films grown by stepwise flash evaporation onto glass and silicon substrates held at 573 K were studied using X-ray diffraction (XRD), transmission electron microscopy (TEM), Rutherford back-scattering spectrometry (RBS) and Raman spectroscopy. XRD and TEM studies showed the formation of single-phase polycrystalline CuInTe2. Results of the RBS measurements showed the films to be near-stoichiometric and negligible diffusion of elements across the CuInTe2/Si interface. Various lattice vibrational modes identified by Raman measurements were found to match well with those reported for single-crystal CuInTe2, confirming the crystalline quality of the CuInTe2 thin films. (C) 2008 Elsevier B.V. All rights reserved.