Cu2ZnSnS4 (CZTS)-based solar cell devices were prepared entirely by non-vacuum deposition techniques on soda lime glass (SLG) substrates. The ZnO:AI window, Us buffer and CZTS absorber layers of the Al/ZnO:Al/CdS/CZTS/Mo/SLG solar cell structure were deposited by sol-gel method, chemical bath deposition method and sol-gel sulfurizing method, respectively. The best solar cell sample showed an open-circuit voltage of 390 mV, a short-circuit current density of 7.8 mA/cm(2), a fill factor of 0.33 and an efficiency of 1.01% under irradiation of AM 1.5 and 100 mW/cm(2). This is the first report on CZTS thin film solar cells in which all the semiconductor layers were prepared under non-vacuum condition. (C) 2009 Elsevier B.V. All rights reserved.