We present absorption properties enhancement for two CuGaS(2)-based intermediate-band materials, as promising compounds for high efficiency, lower-cost photovoltaic devices. Previous band diagrams calculations predicted that these materials present a partially filled localized band within the band gap of the host semiconductor, which would increase the absorption of low-energy photons, creating additional electron-hole pairs respect to a conventional semiconductor. This could ideally result in an increase of the photocurrent of the cell without the fall of the open-circuit voltage. In this paper we show, using density functional methods, the effect of this intermediate band on the optical properties of the derived alloys. We highlight the significant enhancement of the absorption coefficient observed in the most intense range of the solar emission and we study the reflectance and transmittance properties of the materials in order to understand the effect of the thickness of the sample on the optical properties. We compare two different substituents of the Ga atoms in CuGaS(2), namely, Ti and Cr atoms, able to form the intermediate-band material, and their interest for photovoltaic applications. (C) 2010 Elsevier B.V. All rights reserved.