A monolithic high voltage 1.87 eV AlGaAs/1.65 eV AlGaAs/1.42 eV GaAs triple junction (3J) photovoltaic (PV) cell design is presented. The motivation for this particular design is to reduce resistive I(2)R power loss that degrades PV module efficiency, to bypass the use of limited resources such as indium and germanium, and to simplify epitaxial growth with the lattice matched Al(x)Ga(1-x)As semiconductor family. (C) 2010 Elsevier B.V. All rights reserved.