Highly aluminum-doped p-type silicon regions are formed by in-line high-rate evaporation of aluminum. We deposit aluminum layers of 28 mu m thickness at dynamic deposition rates of 20 mu m x m/min on p-type silicon substrates. Due to the high substrate temperature of up to 770 degrees C during deposition an Al-doped p(+) region is formed. Using the camera-based dynamic infrared lifetime mapping technique we measure emitter saturation current densities of 695 +/- 65 fA/cm(2) for the fully metalized Al-p(+) regions, which corresponds to an implied solar cell open-circuit voltage of 635 +/- 2 mV. (C) 2011 Elsevier B.V. All rights reserved.