Tantalum nitride thin films were deposited by radio frequency (RF) reactive sputtering at various N-2/Ar gas flow ratios and working pressures to examine the change of their electrical resistivity. From the X-ray diffraction (XRD) and four-point probe sheet resistance measurements of the TaNx films, it was found that the change of the crystalline structures of the TaNx films as a function of the N-2 partial pressure caused an abrupt change of the electrical resistivity. When the hexagonal structure TAN thin films changed to an f.c.c. structure, the sheet resistance increased from 16 Omega/sq to 1396 Omega/sq. However, we were able to control the electrical resistivity of the TaN thin film in the range from 69 Omega/sq to 875 Omega/sq, with no change in crystalline structure, within a certain range of working pressures. The size of the grains in the scanning electron microscopy (SEM) images seemed to decrease with the increase of working pressure. (c) 2007 Elsevier B.V. All rights reserved.