Hybrid thin films have been deposited on silicon substrates under several conditions such as different annealing temperatures and RF power by plasma enhanced chemical vapor deposition method using single molecular precursors. The result of the FT-IR measurement showed that the plasma polymerized thin films have highly cross-linked density with increasing RF power and annealing temperature. An impedance analyzer was utilized for the measurements of I-V and C-V curves. From the electrical properties measurements, the lowest dielectric constant and best leakage constant were obtained to be 2.26 and 10(-9) A/cm(2) at 1 MV/cm, respectively. Also, the mechanical properties of the films were determined with nano-indentation. (c) 2007 Elsevier B.V. All rights reserved.