High power pulsed magnetron sputtering has been used for depositing Al-doped ZnO films from metallic targets in a reactive process. A new type of process control has been developed in order to stabilize the discharge in the transition region. It has been shown that the process can be stabilized for all operating points at high peak power densities. The discharge characteristics like peak power density and plasma impedance have been analyzed. Films have been deposited at room temperature and 200 degrees C and resistivities below 400 mu Omega cm have been obtained. (C) 2007 Elsevier B.V. All rights reserved.