The temperature-dependent photoluminescence (PL) properties of the As-doped (Zn0.93Mn0.07)O layer, which showed the stable p-type conductivity with carrier concentration of similar to 10(18) cm(-3) and carrier mobility of similar to 10 cm(2) V-1 s(-1), were investigated. From fitting of the Bose-Einstein approximation using extracted emission parameters from temperature-dependent PL spectra, it was found that the interaction between exciton and phonon in p-(Zn0.93Mn0.07)O:As is higher than that in host material ZnO. This result was confirmed as resulting from the increase of disorder-activated phonon scattering which is attributed to the increase of free carriers donated from implanted As dopants. (C) 2007 Elsevier B.V. All rights reserved.