A series of hot (600 degrees C) and room temperature C+/Al+ co-implanted 6H-SiC epitaxial films, under different implantation dose levels and high temperature (1550 degrees C) post-annealing, were studied by a variety of structural and optical characterization techniques, including secondary ion mass spectroscopy, high resolution X-ray diffraction, Fourier transform infrared reflectance, micro-Raman and photoluminescence (PL) spectroscopy. The damage and amorphization of SiC layer by co-implantation, and the elimination/suppression of the implantation induced amorphous layer via high temperature annealing are observed. The recovery of the crystallinity and the activation of the implant acceptors are confirmed. The results from hot or RT co-implantation are compared. (C) 2007 Elsevier B.V. All rights reserved.