Ta/Ta-N multilayer has been developed to control temperature coefficient of resistance (TCR) in a thin-film embedded resistor with the incorporation of Ta layer (+TCR) inserted into Ta-N layers (-TCR). Electrical and structural properties of sputtered Ta, Ta-N and the multilayer films were investigated. The stable resistivity value of 0.0065 Omega.cm in beta-Ta film was obtained, and phase change from fcc-TaN to orthorhombic Ta3N5 in Ta-N films was observed at nitrogen partial pressure of 22%. The multilayer of Si/Ta(60 nm)/Ta3N5(104 nm)/Ta(60 nm)/Ta3N5(104 nm) showed TCR value of -284 ppm/K, where TCR of Ta was - 183 ppm/K and that of Ta3N5 was -3193 ppm/K. (c) 2007 Elsevier B.V. All rights reserved.