We have systematically investigated the temperature dependence of resistivity p and Hall coefficient R-H of indium zinc oxide films with thickness d=350 nm in the temperature range 2.0 K to 300 K. Specimen films with p similar or equal to 3-17 mu Omega m (300 K) show metallic characteristics (P-T) at temperatures above 100 K. At low temperatures below 20 K, the resistivity slightly increases with decreasing temperature because of the quantum effects in disordered systems. By eliminating carefully quantum effects rho(quanta) and the residual resistivity rho(0), we have found that the resistivity changes in the form of rho(proportional to)rho T-0(2) at temperatures below similar or equal to 100 K. This characteristic indicates the existence of resistivity Pel-ph-imp due to the interference effect between the impurity scattering and the electron-phonon scattering. It has been found that the temperature dependence of p(T)for all present films agrees well with the sum of the Bloch-Gruncisen term rho(el-ph) = beta F(T,Theta(D)) and the interference term rho(el-ph-imp) =B(el-ph-imp)G(T,Theta(D)) in a temperature region 20 K to 300 K. From analyses, regarding the coefficients beta, Bel-ph-imp and the Debye temperature Theta(D) as fitting parameters, we obtain the Theta(D) similar or equal to 970-1060 K and the longitudinal sound velocity v similar or equal to 14,000 m/s under some assumptions. (C) 2007 Elsevier B.V. All rights reserved.