In(3+)-added Bi(4)Ti(3)O(12) films were deposited by the magnetron sputtering followed by annealing at 650 degrees C for crystallization. To obtain the ferroelectric performance, sputtering targets of the BiO(3)-In(2)O(3)-TiO(2) system for In(3+)-added Bi(4)Ti(3)O(12) films were systematically fabricated with varying In(3+) and Bi(3+) contents. The variations between the compositions of the targets and films were investigated. Analyses of structure, microstructure, composition, ferroelectricity, and electric properties were used to evaluate the In(3+)-added films. The films of In-0.1- and In-0.2-BInT (or Bi-0-BInT) obtained from the targets Bi(2.45)In(0.45)Ti(2.9)O(z) and Bi(2.45)In(0.55)Ti(2.9)O(z) formed single phase after annealing. They had better remanent polarization of similar to 7.0 mu C/cm(2) accompanied by a coercive field of similar to 210 kV/cm, a dielectric constant of 133 similar to 142 at 1 MHz, and a lower leakage current density of similar to 10(-8) A/cm(2) at 75 kV/cm. The lower leakage current density was related to the drop of ion-jump conduction from the Ti(4+) <-> Ti(3+) transition. Although the indium substitution mainly occupying on the B or Ti site enhanced ferroelectricity by lattice distortion, it created oxygen vacancy to deteriorate ferroelectricity. (c) 2007 Elsevier B.V. All rights reserved.