Cerium oxide was grown epitaxially on a Cu(111) substrate at 520 K in an oxygen atmosphere and resulted in a high quality CeO(2) (111) overlayers. The continuous single crystalline thin films were characterized by low energy electron diffraction, X-ray photoelectron spectroscopy of the Ce 3d core levels and resonant photoelectron spectroscopy of the valence band. The Ce oxide on Cu(111) grew initially in the form of islands giving a sharp (1.5 x 1.5) hexagonal diffraction pattern of the CeO(2) (111) structure. It covered the substrate surface completely after deposition of a 2.5-monolayer thick overlayer. Ce 3d spectra and resonant enhancement of the valence band emission show that Ce is present in the Ce(4+) oxidation state. (C) 2007 Elsevier B.V. All rights reserved.