Fe(3)Si thin films were prepared in ultrahigh vacuum by codeposition of (57)Fe and Si onto various substrates (Si(100), NaCl(100) and KCl(100)) held at 130 K. The structural properties were determined by X-ray diffraction, transmission electron microscopy and Mossbauer spectroscopy. Our results demonstrate that Fe(3)Si films prepared on substrates with a lattice parameter similar to that of Fe(3)Si (Si(100) and NaCl(100)) grow in the crystalline disordered B2 structure (with Fe(3)Si/Si(100)being epitaxial), while Fe(3)Si films on KCl(100) substrates (with a lattice parameter deviating strongly from that of Fe(3)Si) grow predominantly in the amorphous structure. The low-T growth of epitaxial Fe(3)Si/Si(100) films could be an approach for suppression of interfacial interdiffusion in Fe(3)Si/Si(100) heterostructures for potential magnetoelectronics applications. (C) 2007 Elsevier B.V. All rights reserved.