Ultra-thin MeSxHy (Me = In, Cu, Pb) heterojunctions were sandwiched between compact TiO2 and PEDOT:PSS layers. The MeSxHy layers were prepared by SILAR (successive ion layer adsorption and reaction). Intensity and temperature dependent current-voltage characteristics were investigated for small area solar cell structures. Highest values of open circuit voltage (0.9 V) were obtained for the In2S3/PbInxSyHz system annealed at moderate temperatures (150-200 degrees C) while PbInxSyHz did not act as an absorber. Largest values of short circuit current were reached for the In2S3/CuInxSyHz system in which both layers act as an absorber. The role of Pb and hydrosulfide for interface formation and defect passivation is discussed. (c) 2007 Elsevier B.V. All rights reserved.