We describe the preparation of high-temperature PbTe diodes. Satisfactory rectification was observed up to 180-200 K. Two types of diodes, based on a p-PbTe single crystal, were prepared: (1) by In ion-implantation, and (2) by thermodiffusion of In. Measurements were carried-out from similar to 10 K to similar to 200 K. The ion-implanted diodes exhibit a satisfactorily low saturation current up to a reverse bias of similar to 400 mV, and the thermally diffused junctions up to similar to 1 V. The junctions are linearly graded. The current-voltage characteristics have been fitted using the Shockley model. Photosensor parameters: zero-bias-resistance x area product, the R0C0-time constant and the detectivity D* are presented. (c) 2007 Elsevier B.V. All rights reserved.