We fabricated Si/SiO2 multilayered films having nanometer-order thicknesses of Si and SiO2 layers by using radio-frequency magnetron sputtering and subsequently annealed the samples at high temperatures of 1150 to 1250 degrees C. We observed ultraviolet photoluminescence having a sharp peak at a wavelength of around 370 nm, generated by using a He-Cd laser (wavelength lambda =325 nm) at room temperature, from a sample annealed at 1200 degrees C. The peak energy was 3.4 eV (lambda similar to 370 nm), and the full width at half maximum of the peak was 0.20 eV. Ultraviolet-light emission can be useful for light sources of higher-density optical-disk systems. (c) 2008 Elsevier B.V. All rights reserved.